Semyagin, B.R.: search on Z-Library

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1

Influence of a Low-Temperature GaAs Dislocation Filter on the Perfection of GaAs/Si Layers

Abramkin, D. S., Petrushkov, M. O., Emel’yanov, E. A., Putyato, M. A., Semyagin, B. R., Vasev, A. V., Esin, M. Yu., Loshkarev, I. D., Gutakovskii, A. K., Preobrazhenskii, V. V., Shamirzaev, T. S.

Journal:

Optoelectronics, Instrumentation and Data Processing

Year:

2018

Language:

english

File:

PDF, 282 KB

english, 2018

2

[IEEE 2019 20th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices (EDM) - Erlagol (Altai Republic), Russia (2019.6.29-2019.7.3)] 2019 20th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices (EDM) - MBE of InAsSb Solid Solutions on Misoriented GaAs(100) Substrates: Experiment and Kinetic Analysis

Emelyanov, Eugene A., Petrushkov, Mikhail O., Putyato, Mikhail A., Vasev, Andrei V., Semyagin, Boris R., Preobrazhenskii, Valerii V.

Year:

2019

Language:

english

File:

PDF, 465 KB

english, 2019

3

Optical shutters for a compact femtosecond Yb:KYW laser

Rubtsova, N N, Kovalyov, A A, Ledovskikh, D V, Preobrazhenskii, V V, Putyato, M A, Semyagin, B R, Kuznetsov, S A, Pivtsov, V S, Semenko, A V

Journal:

Year:

2020

Language:

english

File:

PDF, 619 KB

english, 2020

4

Electron microscopy of GaAs Structures with InAs and as quantum dots

V. N. Nevedomskii, N. A. Bert, V. V. Chaldyshev, V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin

Journal:

Year:

2011

Language:

english

File:

PDF, 432 KB

english, 2011

5

Cyclotron resonance of dirac fermions in InAs/GaSb/InAs quantum wells

Krishtopenko, S. S., Ikonnikov, A. V., Maremyanin, K. V., Bovkun, L. S., Spirin, K. E., Kadykov, A. M., Marcinkiewicz, M., Ruffenach, S., Consejo, C., Teppe, F., Knap, W., Semyagin, B. R., Putyato, M.

Journal:

Year:

2017

Language:

english

File:

PDF, 285 KB

english, 2017

6

As barriers

Pusep, Yu. A., da Silva, S. W., Galzerani, J. C., Milekhin, A. G., Preobrazhenskii, V. V., Semyagin, B. R., Marahovka, I. I.

Journal:

Physical Review B

Year:

1995

Language:

english

File:

PDF, 392 KB

english, 1995

7

High-power, efficient, semiconductor saturable absorber mode-locked Yb:KGW bulk laser

Kisel, V. E., Rudenkov, A. S., Pavlyuk, A. A., Kovalyov, A. A., Preobrazhenskii, V. V., Putyato, M. A., Rubtsova, N. N., Semyagin, B. R., Kuleshov, N. V.

Journal:

Year:

2015

Language:

english

File:

PDF, 1.45 MB

english, 2015

8

Photodiode properties of molecular beam epitaxial InSb on a heavily doped substrate

Sun, Weiguo, Fan, Huitao, Peng, Zhenyu, Zhang, Liang, Zhang, Xiaolei, Zhang, Lei, Lu, Zhengxiong, Si, Junjie, Emelyanov, E., Putyato, M., Semyagin, B., Pchelyakov, O., Preobrazhenskii, V.

Journal:

Infrared Physics & Technology

Year:

2014

Language:

english

File:

PDF, 743 KB

english, 2014

9

Structure and photoluminescence study of type-II GaAs quantum wires and dots grown on nano-faceted (3 1 1)A surface

M.D Efremov, V.A Volodin, V.A Sachkov, V.V Preobrazhenskii, B.R Semyagin, D.V Marin, R.S Matvienko, N.N Ledentsov, I.P Soshnikov, D Litvinov, A Rosenauer, D Gerthsen

Journal:

Physica E: Low-dimensional Systems and Nanostructures

Year:

2004

Language:

english

File:

PDF, 371 KB

english, 2004

10

Raman study of GaAs quantum wires grown with partial filling of corrugated (311)A AlAs surfaces

M.D. Efremov, V.A. Volodin, V.A. Sachkov, V.V. Preobrazhenski, B.R. Semyagin, N.N. Ledentsov, V.M. Ustinov, I.P. Soshnikov, D. Litvinov, A. Rosenauer, D. Gerthsen

Journal:

Microelectronics Journal

Year:

2002

Language:

english

File:

PDF, 546 KB

english, 2002

11

Ostwald ripening in two-dimensional and three-dimensional systems of As clusters in low temperature grown GaAs films

V.V. Chaldyshev, N.A. Bert, V.V. Preobrazhenskii, M.A. Putyato, B.R. Semyagin

Journal:

Materials Science and Engineering: A

Year:

1997

Language:

english

File:

PDF, 387 KB

english, 1997

12

Donor-acceptor recombination in type-II GaAs/AlAs superlattices

K. S. Zhuravlev, A. M. Gilinskii, T. S. Shamirzaev, V. V. Preobrazhenskii, B. R. Semyagin, M. A. Putyato, S. S. Chipkin

Journal:

Physics of the Solid State

Year:

1998

Language:

english

File:

PDF, 94 KB

english, 1998

13

High-resolution x-ray diffraction study of InAs-GaAs superlattices grown by molecular-beam epitaxy at low temperature

N. N. Faleev, V. V. Chaldyshev, A. E. Kunitsyn, V. V. Tret’yakov, V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin

Journal:

Year:

1998

Language:

english

File:

PDF, 125 KB

english, 1998

14

New system of self-assembled GaSb/GaP quantum dots

D. S. Abramkin, M. A. Putyato, A. K. Gutakovskii, B. R. Semyagin…

Journal:

Year:

2012

Language:

english

File:

PDF, 388 KB

english, 2012

15

[IEEE 2011 12th International Conference and Seminar of Young Specialists on Micro/Nanotechnologies and Electron Devices (EDM 2011) - Erlagol, Altai, Russia (2011.06.30-2011.07.4)] 2011 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices Proceedings - Effect of As2 and As4 fluxes on the morphology of GaSb(001) surface during growth of GaSb/InAs heterojunction by MBE

Emelyanov, Eugene A., Putyato, Mikhail A., Semyagin, Boris R., Vasilenko, A., Feklin, D., Vasev, Andrey V., Preobrazhenskii, Valery V.

Year:

2011

Language:

english

File:

PDF, 987 KB

english, 2011

16

Ordered arrays of vertically correlated GaAs and AlAs quantum wires grown on a GaAs(311)A surface

D. Litvinov, A. Rosenauer, D. Gerthsen, N. N. Ledentsov, D. Bimberg, G. A. Ljubas, V. V. Bolotov, V. A. Volodin, M. D. Efremov, V. V. Preobrazhenskii, B. R. Semyagin, I. P. Soshnikov

Year:

2002

Language:

english

File:

PDF, 737 KB

english, 2002

17

[IEEE 2002 Siberian Russian Workshop on Electron Devices and Materials Proceedings - Altai, China (2002.7.1-2002.7.5)] Proceedings. 3rd Annual Siberian Russian Workshop on Electron Devices and Materials - New mechanism of nanosized InAs grains formation on porous silicon surface

Leonov, I.A., Sokolov, L.V., Preobrazhenskii, V.V., Semyagin, B.R., Putyato, M.A., Zakharov, N.D., Romanov, S.I., Volodin, V.V., Kolesnikov, A.V., Pchelyakov, O.P.

Year:

2002

Language:

english

File:

PDF, 248 KB

english, 2002

18

Proximity-induced superconductivity within the InAs/GaSb edge conducting state

Kononov, A., Kostarev, V. A., Semyagin, B. R., Preobrazhenskii, V. V., Putyato, M. A., Emelyanov, E. A., Deviatov, E. V.

Journal:

Physical Review B

Year:

2017

Language:

english

File:

PDF, 461 KB

english, 2017

19

Raman study of confined TO phonons in GaAs/AlAs superlattices grown on GaAs (311)A and B surfaces

V.A. Volodin, M.D. Efremov, V.V. Preobrazhenskii, B.R. Semyagin, V.V. Bolotov

Journal:

Superlattices and Microstructures

Year:

1999

Language:

english

File:

PDF, 116 KB

english, 1999

20

Experimental determination of the incorporation factor of As4 during molecular beam epitaxy of GaAs

V.V Preobrazhenskii, M.A Putyato, O.P Pchelyakov, B.R Semyagin

Journal:

Journal of Crystal Growth

Year:

1999

Language:

english

File:

PDF, 119 KB

english, 1999

21

Influence of the structural surface state on the formation of a relief and morphology of GaAs(001) layers during molecular-beam epitaxy and vacuum annealing

A. V. Vasev, M. A. Putyato, B. R. Semyagin, V. A. Seleznev, V. V. Preobrazhenskii

Journal:

Russian Physics Journal

Year:

2008

Language:

english

File:

PDF, 1.07 MB

english, 2008

22

Optical phonons in quantum-wire structures

A. Milekhin, Yu. Pusep, Yu. Yanovskii, V. Preobrazhenskii, B. Semyagin

Journal:

Year:

1998

Language:

english

File:

PDF, 87 KB

english, 1998

23

[IEEE 2011 12th International Conference and Seminar of Young Specialists on Micro/Nanotechnologies and Electron Devices (EDM 2011) - Erlagol, Altai, Russia (2011.06.30-2011.07.4)] 2011 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices Proceedings - Formation of HfO2/GaAs(001) interface with Si interlayer

Golyashov, Vladimir A., Aksenov, Maxim S., Valisheva, Natalya A., Prosvirin, Igor P., Kalinkin, Alexandr V., Preobrazhensky, Valery V., Putyato, Mikhail A., Semyagin, Boris. R., Tereshchenko, Oleg E.

Year:

2011

Language:

english

File:

PDF, 172 KB

english, 2011

24

Efficient high-power femtosecond Yb 3+ :KY(WO 4 ) 2 laser

Kovalyov, A A, Preobrazhenskii, V V, Putyato, M A, Rubtsova, N N, Semyagin, B R, Kisel, V E, Rudenkov, A S, Kuleshov, N V, Pavlyuk, A A

Journal:

Laser Physics Letters

Year:

2015

Language:

english

File:

PDF, 538 KB

english, 2015

25

Structural transformations in low-temperature grown GaAs:Sb

Vasyukov, D A, Baidakova, M V, Chaldyshev, V V, Suvorova, A A, Preobrazhenskii, V V, Putyato, M A, Semyagin, B R

Journal:

Journal of Physics D Applied Physics

Year:

2001

Language:

english

File:

PDF, 338 KB

english, 2001

26

Sb-rich nanoinclusions in an AlGaAsSb metamaterial

Bert, Nikolay A., Chaldyshev, Vladimir V., Cherkashin, Nikolay A., Nevedomskiy, Vladimir N., Preobrazhenskii, Valery V., Putyato, Michael A., Semyagin, Boris R., Ushanov, Vitaliy I., Yagovkina, Maria

Journal:

Year:

2019

File:

PDF, 1.32 MB

2019

27

A technique for fabricating InGaAs/GaAs nanotubes of precisely controlled lengths

Prinz, V Ya, Chekhovskiy, A V, Preobrazhenskii, V V, Semyagin, B R, Gutakovsky, A K

Journal:

Year:

2002

Language:

english

File:

PDF, 218 KB

english, 2002

28

Influence of Antimony Doping on Nanoscale Arsenic Clusters and Dislocation Loops in Low-Temperature Grown Gallium Arsenide Films

Chaldyshev, V.V., Bert, N.A., Romanov, A.E., Suvorova, A.A., Kolesnikova, A.L., Preobrazhenskii, V.V., Putyato, M.A., Semyagin, B.R., Werner, P.

Journal:

MRS Proceedings

Year:

2000

Language:

english

File:

PDF, 563 KB

english, 2000

29

Effect of a low-temperature-grown GaAs layer on InAs quantum-dot photoluminescence

Kosarev, A. N., Chaldyshev, V. V., Preobrazhenskii, V. V., Putyato, M. A., Semyagin, B. R.

Journal:

Year:

2016

Language:

english

File:

PDF, 300 KB

english, 2016

30

Interlayer current near the edge of an InAs/GaSb double quantum well in proximity with a superconductor

A. Kononov,S. V. Egorov,N. Titova,B. R. Semyagin,V. V. Preobrazhenskii…

Journal:

Year:

2017

Language:

english

File:

PDF, 498 KB

english, 2017

31

Diffusion Blurring of GaAs Quantum Wells Grown at Low Temperature

Ushanov, V. I., Chaldyshev, V. V., Preobrazhenskii, V. V., Putyato, M. A., Semyagin, B. R.

Journal:

Year:

2018

Language:

english

File:

PDF, 231 KB

english, 2018

32

Ordered arrays of arsenic clusters coincided with InAs/GaAs superlattices grown by low-temperature MBE

V.V Chaldyshev, N.N Faleev, N.A Bert, Yu.G Musikhin, A.E Kunitsyn, V.V Preobrazhenskii, M.A Putyato, B.R Semyagin, P Werner

Journal:

Journal of Crystal Growth

Year:

1999

Language:

english

File:

PDF, 187 KB

english, 1999

33

Optical properties of the (3 1 1) oriented GaAs/AlAs superlattices and quantum wire-like structures

A Milekhin, Yu Yanovskii, V Preobrazhenskii, B Semyagin, Yu Pusep, J.C Galzerani

Journal:

Physica E: Low-dimensional Systems and Nanostructures

Year:

1998

Language:

english

File:

PDF, 109 KB

english, 1998

34

High-resolution X-ray diffraction studies of the GaAs structures grown at a low temperature and periodically δ-doped with antimony and phosphorus

V. V. Chaldyshev, M. A. Yagovkina, M. V. Baidakova, V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin

Journal:

Year:

2009

Language:

english

File:

PDF, 265 KB

english, 2009

35

Raman study of phonon-plasmon coupling modes in tunnelling GaAs/AlAs superlattices, grown on (311) and (001) surfaces

V. A. Volodin, M. D. Efremov, V. A. Sachkov, V. V. Preobrazhenski, B. R. Semyagin, E. A. Galaktionov, D. A. Orehov

Year:

2001

Language:

english

File:

PDF, 85 KB

english, 2001

36

Spatial Ordering of As Clusters Due to Indium Delta-Doping of LTMBE GaAs

Bert, N. A., Chaldyshev, V. V., Faleev, N. N., Kunitsyn, A. E., Tret'yakov, V. V., Lubyshev, D. I., Preobrazhenskii, V. V., Semyagin, B R.

Journal:

MRS Proceedings

Year:

1995

Language:

english

File:

PDF, 1.41 MB

english, 1995

37

Zinc Diffusion into InP via a Narrow Gap from a Planar Zn3P2-Based Source

Petrushkov, M. O., Putyato, M. A., Chistokhin, I. B., Semyagin, B. R., Emel’yanov, E. A., Esin, M. Yu., Gavrilova, T. A., Vasev, A. V., Preobrazhenskii, V. V.

Journal:

Technical Physics Letters

Year:

2018

Language:

english

File:

PDF, 350 KB

english, 2018

38

Optical phonons in quantum-wire structures [JETP Lett. 67, No. 2, 120–134 (25 January 1998)]

A. Milekhin, Yu. Pusep, Yu. Yanovskii, V. Preobrazhenskii, B. Semyagin

Journal:

Year:

1998

File:

PDF, 34 KB

1998

39

[Novosibirsk Student Branch of IEEE 2003 Siberian Russian Workshop on Electron Devices and Materials Proceedings. 4th Annual - Erlagol, Atai, Russia (1-4 July 2003)] 2003 Siberian Russian Workshop on Electron Devices and Materials. Proceedings. 4th Annual (IEEE Cat. No.03EX664) - Control of wurzite GaN layer polarity on initial stages of growth during ammonia molecular beam epitaxy on (0001) Al/sub 2/O/sub 3/ substrate

Preobrazhenskii, V.V., Semyagin, B.R., Putyato, M.A., Khamzin, T.K., Mansurov, V.G., Toropov, A.I., Pchelyakov, O.P.

Year:

2003

Language:

english

File:

PDF, 468 KB

english, 2003

40

In–Ga intermixing in low-temperature grown GaAs delta doped with In

Bert, N. A., Chaldyshev, V. V., Musikhin, Yu. G., Suvorova, A. A., Preobrazhenskii, V. V., Putyato, M. A., Semyagin, B. R., Werner, P.

Journal:

Applied Physics Letters

Year:

1999

Language:

english

File:

PDF, 576 KB

english, 1999

41

Enhanced arsenic excess in low-temperature grown GaAs due to indium doping

Bert, N. A., Chaldyshev, V. V., Kunitsyn, A. E., Musikhin, Yu. G., Faleev, N. N., Tretyakov, V. V., Preobrazhenskii, V. V., Putyato, M. A., Semyagin, B. R.

Journal:

Applied Physics Letters

Year:

1997

Language:

english

File:

PDF, 418 KB

english, 1997

42

Interface reconstruction in GaAs/AlAs ultrathin superlattices grown on (311) and (001) surfaces

Efremov, M D, Volodin, V A, Sachkov, V A, Preobrazhenski, V V, Semyagin, B R, Bolotov, V V, Galaktionov, E A, Kretinin, A V

Journal:

Year:

2001

Language:

english

File:

PDF, 170 KB

english, 2001

43

Capacitance Spectroscopy of Thin GaAs Layers Grown by Molecular Beam Epitaxy at Low Temperatures

Chaldyshev, V.V., Brounkov, P.N., Suvorova, A.A., Konnikov, S.G., Preobrazhenski, V.V., Putyato, M.A., Semyagin, B.R.

Journal:

Solid State Phenomena

Year:

1997

File:

PDF, 387 KB

1997

44

[IEEE 2015 16th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices (EDM) - Erlagol, Russia (2015.6.29-2015.7.3)] 2015 16th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices - Investigation of the Lithium-ion battery characteristics

Kuchak, Sergey V., Kuchak, Elizaveta F., Semyagin, Andrey S.

Year:

2015

Language:

english

File:

PDF, 424 KB

english, 2015

45

Indium layers in low-temperature gallium arsenide: Structure and how it changes under annealing in the temperature range 500–700 °C

N. A. Bert, A. A. Suvorova, V. V. Chaldyshev, Yu. G. Musikhin, V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin, R. Werner

Journal:

Year:

1998

Language:

english

File:

PDF, 452 KB

english, 1998

46

Capacitance study of electron traps in low-temperature-grown GaAs

P. N. Brunkov, A. A. Gutkin, A. K. Moiseenko, Yu. G. Musikhin, V. V. Chaldyshev, N. N. Cherkashin, S. G. Konnikov, V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin

Journal:

Year:

2004

Language:

english

File:

PDF, 102 KB

english, 2004

47

Structural transformations in the low-temperature grown GaAs with superlattices of Sb and P δ-layers

Baidakova, M. V., Bert, N. A., Chaldyshev, V.V., Nevedomsky, V. N., Yagovkina, M. A., Preobrazhenskii, V. V., Putyato, M. A., Semyagin, B. R.

Journal:

Acta Crystallographica Section B Structural Science

Year:

2013

Language:

english

File:

PDF, 276 KB

english, 2013

48

Determination of stress, strain, and elemental distribution within In(Ga)As quantum dots embedded in GaAs using advanced transmission electron microscopy

Cherkashin, N., Reboh, S., Hÿtch, M. J., Claverie, A., Preobrazhenskii, V. V., Putyato, M. A., Semyagin, B. R., Chaldyshev, V. V.

Journal:

Applied Physics Letters

Year:

2013

Language:

english

File:

PDF, 2.66 MB

english, 2013

49

Fröhlich resonance in the AsSb/AlGaAs system

Ushanov, V. I., Chaldyshev, V. V., Il’inskaya, N. D., Lebedeva, N. M., Yagovkina, M. A., Preobrazhenskii, V. V., Putyato, M. A., Semyagin, B. R.

Journal:

Physics of the Solid State

Year:

2014

Language:

english

File:

PDF, 234 KB

english, 2014

50

Formation of dislocation defects in the process of burying of InAs quantum dots into GaAs

N. A. Bert, A. L. Kolesnikova, V. N. Nevedomsky, V. V. Preobrazhenskii, M. A. Putyato, A. E. Romanov, V. M. Seleznev, B. R. Semyagin, V. V. Chaldyshev

Journal:

Year:

2009

Language:

english

File:

PDF, 649 KB

english, 2009

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